Monolayer Graphene on SiC substrate
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Monolayer Graphene on SiC substrate (Epitaxially grown)

Epitaxially grown Monolayer Graphene Film on SiC substrate

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A high-quality epitaxial monolayer graphene is fabricated on Si-face of semi-insulating, transparent {0001} 4H-SiC substrates via solid-state graphitization. During the sublimation process, a specific buffer layer that has a distorted graphene-like structure forms between the graphene film and the underlying SiC substrate. Both the substrate and the buffer layer influence the electronic properties, resulting in intrinsic n-doping of the epitaxially grown monolayer graphene.

Note: Graphene side is facing up in the box. Take precaution while handling the sample to avoid any damage to the film.

Key Features:

  • Excellent carrier mobility
  • Controlled growth of Graphene layers
  • Better purity of the samples
  • Potential scalable method for graphene fabrication                                                                  


    Properties of Monolayer Graphene:

    Sample Size: 8mm x 8mm
    Sheet Resistance: 350 Ω-sq
    Carrier Mobility at 300K: 2500-3000 cm2V-1s-1
    Carrier Density: 1012 cm-2
    Carrier Type: Electrons
    Monolayer Coverage Area: 92.25 ± 5%
    Graphene Coverage: 99.5%
    Transmittance: >97%
    Terrace Width/ Step Height: 1-26μm /1-15 ± 2nm

    Properties of SiC substrate:

    Type: 4H-SiC
    Substrate Orientation: {0001} ± 0.25 deg
    Graphene facing side: Si
    Thickness of the substrate: 350 ± 50μm
    Substrate Resistivity: 4.4x109 Ω-m 

    Applications:

  • Graphene Research
  • Graphene Integral Circuits
  • Chemical and Bio Sensors
  • MEMS and NEMS
  • Spintronics
  • High Frequency Transistors
  • Graphene Electronics
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    Epitaxially grown Monolayer Graphene Film on SiC substrate

    SEK 5040 

    Epitaxially grown Monolayer Graphene Film on SiC substrate